Point defects in semiconductors and insolators

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The previous book on the structural analysis of point defects in solids was published about a decade ago, and since then, significant advancements have been made in both experimental techniques and theoretical interpretations. A mere second edition with corrections and minor updates would not suffice. The application of multiple magnetic resonance methods has increasingly shifted towards materials science, becoming a crucial tool for materials analysis, rather than focusing solely on fundamental studies in solid-state physics. This shift necessitates a more accessible approach for materials scientists to utilize and understand these methods. The two introductory chapters on conventional electron paramagnetic resonance (EPR) from the previous book have been retained, as they form the foundation for multiple resonance techniques. The chapter on optical detection of EPR (ODEPR) has been expanded to include insights on structural information from "forbidden" transitions and spatial correlations between defects through "cross relaxation spectroscopy." Additionally, high-field ODEPR/ENDOR has been incorporated. The chapter on stationary electron nuclear double resonance (ENDOR) has also been enhanced with the inclusion of the stochastic ENDOR method, developed recently in Paderborn and now commercially available.