Fundamentals of Silicon Carbide Technology

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This comprehensive introduction and up-to-date reference explores SiC power semiconductor devices, covering material properties and applications. Following breakthroughs in SiC material science and fabrication in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) became commercially available in 2001, leading to significant market growth. SBDs are now widely used in power systems, particularly in switch-mode power supplies and motor controls. SiC power MOSFETs entered the market in 2011, offering rugged, high-efficiency switches for high-frequency applications. The authors leverage their extensive experience to provide both an introductory overview and a detailed reference for scientists and engineers in this rapidly evolving field. The text covers fundamental properties of SiC materials, processing technology, device theory and analysis, and key system applications. It serves as a valuable resource for graduate students and researchers in crystal growth, material science, and semiconductor technology, as well as design and application engineers, and product managers in areas like power supplies, converter and inverter design, electric vehicles, high-temperature electronics, sensors, and smart grid technology.