Effective Electron Mass in Low-Dimensional Semiconductors

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This book explores the Effective Electron Mass (EEM) in low-dimensional semiconductors, focusing on various materials such as quantum confined non-linear optical, III-V, II-VI, GaP, Ge, and carbon nanotubes, among others. It examines how intense electric fields and light waves alter the band structure of optoelectronic semiconductors, emphasizing the EEM in quantized structures that influence quantum effect devices under strong fields. The significance of measuring the band gap in optoelectronic materials under strong electric fields and external photo excitation is also highlighted. Additionally, the book discusses the effects of crossed electric and quantizing magnetic fields on the EEM, including in heavily doped semiconductors and their nanostructures. It features 200 open research problems integral to the text, catering to Ph.D. aspirants and researchers in solid-state sciences, materials science, nanoscience, and technology. The content is designed for postgraduate students, researchers, engineers, and professionals in related fields, providing valuable insights into modern semiconductor nanostructures.