Atomic layer deposition of aluminum oxide on crystalline silicon

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In the present dissertation, Florian Werner investigates the application of atomic layer deposition (ALD) of amorphous aluminum oxide (Al2O3) dielectric layers to silicon solar cells. Highlights of his thesis include: - A novel spatial ALD process, which is compatible with industry demands. - A comprehensive model of the c-Si/Al2O3 interface, which describes the chemical composition of the deposited film and electron-hole recombination at the interface. - An improved parameterization of intrinsic lifetimes in silicon, which accounts for Coulomb-enhanced Auger and radiative recombination. - An Al2O3-induced hole inversion layer (IL) as hole-collecting emitter in IL solar cells made on n-type silicon, allowing efficiencies above 26%.