Diffusion and clustering of B in Si

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The book delves into the evolution of microelectronics since the transistor's invention, highlighting silicon's pivotal role and the challenges of miniaturization due to semiconductor fabrication limits. It focuses on the widespread use of boron as a p-type dopant and the complications arising from its interaction with defects during device production, which leads to diffusion and precipitation issues. The research presented aims to understand these interactions better and develop innovative methodologies for effective defect engineering to enhance boron's utility in creating ultra-shallow junctions.