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Electronic and Optical Properties of Semiconductors

A Study Based on the Empirical Tight Binding Model

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  • 264 páginas
  • 10 horas de lectura

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The study delves into the electronic and optical properties of intrinsic semiconductors through the orthogonal empirical tight binding model. It analyzes bulk properties of semiconductors with zincblende, diamond, and rocksalt structures, extending previous work to higher-order interaction integrals. New parameter sets for specific semiconductors are introduced, improving alignment with experimental data across the Brillouin zone. Additionally, the Hamiltonian of heterostructures is constructed layer by layer using parameters from the bulk constituents.

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Electronic and Optical Properties of Semiconductors, Lok C. Lew Yan Voon

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Publicado en
1997
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